PART |
Description |
Maker |
KTC4372 |
High Voltage: VCEO=150V
|
TY Semiconductor Co., L...
|
2SA1200 |
High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
2SC2881 |
Voltage Amplifier Applications High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
2SC3645 |
High-Voltage Switching Applications Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SD1821 |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
CFA1535Q |
15.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 1.000A Ic, 95 - 155 hFE. Complementary CFC3944Q
|
Continental Device India Limited
|
2SC4116 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max).
|
TY Semiconductor Co., Ltd
|
2SC5161 |
High breakdown voltage.VCEO = 400V NPN silicon transistor
|
TY Semiconductor Co., Ltd
|
LMBTA44LT1G |
NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400
|
Leshan Radio Company
|
2SA1587 |
High voltage VCEO=-120V High hFE hFE=200 to 700 Small package
|
TY Semiconductor Co., Ltd
|
BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|