PART |
Description |
Maker |
2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
2SA1724 |
High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
2SC3645 |
High-Voltage Switching Applications Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SC3646 |
High-Voltage Switching Applications Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SC4390 |
Adoption of MBIT process. High DC current gain (hFE=800 to 3200).
|
TY Semiconductor Co., Ltd
|
2SC4694 |
Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V).
|
TY Semiconductor Co., Ltd
|
VPA07 VPA18 VPA05 VPM06 VPM07 VPM05 VPH06 VPA25 VP |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV Hybrid intergrated circuits/with FBET/LSBT process chips/Wide bandwidth video output ICs
|
SANYO[Sanyo Semicon Device]
|
M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
DA28F016SV-075 DA28F016SV-070 E28F016SV-075 E28F01 |
WSR2 0.04 Ohms 1% Tolerance 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY 16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 80 ns, PDSO56 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 70 ns, PDSO56 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 75 ns, PDSO56
|
Intel Corp. Intel Corporation Intel, Corp.
|
SST39VF010-70-4I-B3K SST39VF010-70-4C-B3K SST39VF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
http:// Silicon Storage Technol...
|
SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|