| PART |
Description |
Maker |
| NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
P-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| FMKA130 FMKA130NL |
1.0 Schottky Power Rectifier
1.2 Watt Power Dissipation Package 1.0 Ampere, Forward Voltage Less than 600mV
1.2 Watt Power Dissipation Package 1.0 Ampere/ Forward Voltage Less than 600mV
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| SS8050LT1 |
Power dissipation
|
TY Semiconductor Co., Ltd
|
| MMBD4148SE MMBD4148A |
Power dissipation
|
SK Electronics
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| MMBD5817 |
Power Dissipation: PD = 300mW
|
TY Semiconductor Co., Ltd
|
| KTC601U |
Power dissipation: PC=200mW
|
TY Semiconductor Co., Ltd
|
| D7100W |
Low power dissipation
|
Nell Semiconductor Co.,...
|
| MMSZ5221B |
500mW Power Dissipation
|
TY Semiconductor Co., Ltd
|
| BUZ83A |
SOA is Power Dissipation Limited
|
Inchange Semiconductor ...
|
| KTC4379 |
Collector Power Dissipation: PC=500mW
|
TY Semiconductor Co., L...
|
