PART |
Description |
Maker |
KM44C258CP-6 KM44C258CJ-6 KM44C258CJ-8 KM44C258CP- |
256K X 4 STATIC COLUMN DRAM, 60 ns, PDIP20 256K X 4 STATIC COLUMN DRAM, 60 ns, PDSO20 256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20 256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20
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KM41C466J-10 KM41C466J-7 KM41C466J-8 |
64K X 4 STATIC COLUMN DRAM, 100 ns, PQCC18 64K X 4 STATIC COLUMN DRAM, 70 ns, PQCC18 64K X 4 STATIC COLUMN DRAM, 80 ns, PQCC18
|
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HM574256ZP-35R HM574256JP-35R HM574256ZP-40 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
ON Semiconductor
|
CY7C1041BNV33L-15VXC CY7C1041BNV33-15VXC CY7C1041B |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44 256K x 16 Static RAM 256K × 16静态RAM
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道,双循环取消选择静态RAM 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100 256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc
|
UPD42S4170AG5M-70 UPD424170AV-70 UPD424170LG5M-A70 |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40 0.300 INCH, PLASTIC, REVERSE, TSOP2-44/40 256K X 16 FAST PAGE DRAM, 70 ns, PZIP40 0.400 INCH, PLASTIC, ZIP-40 256K X 16 FAST PAGE DRAM, 80 ns, PDSO40 256K X 16 FAST PAGE DRAM, 60 ns, PDSO40
|
Infineon Technologies AG
|
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40 4M X 4 OTHER DRAM, 70 ns, PDSO26 16M X 1 EDO DRAM, 60 ns, PDSO24 4M X 4 OTHER DRAM, 50 ns, PDSO26 16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
IBM025170NT3B-70 IBM025161LG5B-70 |
256K X 16 VIDEO DRAM, 70 ns, PDSO70 0.400 INCH, TSOP-70 256K X 16 VIDEO DRAM, 70 ns, PDSO64
|
Honeywell International, Inc.
|
AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
CY7C199CN-20ZXIT CY7C199CNL-15VC CY7C199CN-20ZI CY |
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.5 to 5.5 V; 32K X 8 STANDARD SRAM, 20 ns, PDSO28 256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28 256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28 256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
Cypress Semiconductor, Corp.
|
CY7C1002-12PC CY7C1001-12PC CY7C1001-25VC CY7C1001 |
256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 12 ns, PDIP32 256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 25 ns, PDSO32 256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 20 ns, PDIP32 256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 20 ns, PDSO32 256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 20 ns, CDIP32
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM 2M x 8 Static RAM Microwire Serial EEPROM 16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM 512K x 32 Static RAM
|
Atmel, Corp.
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