| PART |
Description |
Maker |
| PD45128163-SU PD45128163G5-A75SU-9JF PD45128163G5- |
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行，LVTTL水树（宽温度范围
|
Elpida Memory, Inc.
|
| M2V28S20TP-8 M2V28S40TP-8 M2V28S30TP-8 M2V28S20TP- |
128M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V28S40TP-7L M2V28S30TP-7L M2V28S30TP-8L M2V28S40 |
128M Synchronous DRAM 128M的同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| UPD45128163-A75L |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory, Inc.
|
| UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9J |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
NEC[NEC]
|
| HY57V283220T-I HY57V283220LT-PI |
4Mx32|3.3V|4K|55/6/7/8/P/S|SDR SDRAM - 128M
4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
|
HYNIX SEMICONDUCTOR INC
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
| HYS64T128022HM-3.7-A |
128M X 64 DDRAM MOD, 0.45 ns, DMA214
|
QIMONDA AG
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| EDS1232AASE-75-E EDS1232AASE-75L-E EDS1232AASE-60L |
ER 2C 2#8 SKT RECP LINE
Circular Connector; No. of Contacts:6; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:20-17 RoHS Compliant: No
ER 6C 3#16 3#8 SKT RECP 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
128M bits SDRAM (4M words x 32 bits) 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDS1232CASE-1A-E EDS1232CASE-1AL-E |
ER 8C 7#16 1#12 PIN RECP LINE 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
128M bits SDRAM (4M words x 32 bits) 128兆位的SDRAM分字× 32位）
|
Elpida Memory, Inc.
|
