| PART |
Description |
Maker |
| NESG7030M04-T2B-A NESG7030M04-T2-A NESG7030M04-A |
NPN Silicon Germanium Carbon RF Transistor
|
Renesas Electronics Corporation
|
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| BFP740F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFP740FE6327 BFP740F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| NESG3032M14-T3-A NESG3032M14-A NESG3032M14-T3 NESG |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
California Eastern Labs
|
| ISD4003-06MEI ISD4003-06MPI ISD4003-06MXD ISD4003- |
240 SEC, SPEECH SYNTHESIZER WITH RCDG, PBGA19
RES 150K OHM 1/6W 5% CARBON FILM 单芯片语音记播放设备4 - - - ，和8分钟工期
Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations 单芯片语音记播放设备4 - - 6 - ，和8分钟工期
RES 130K OHM 1/6W 5% CARBON FILM 单芯片语音记播放设备4 - - - ，和8分钟工期
RES 100 OHM 1/6W 5% CARBON FILM
RES 13 OHM 1/6W 5% CARBON FILM
RES 110K OHM 1/6W 5% CARBON FILM
RES 13K OHM 1/6W 5% CARBON FILM
CAP 1000PF 1KV CERAMIC X7R 1812
|
WINBOND ELECTRONICS CORP
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| RQG1001UPAQF RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
