| PART |
Description |
Maker |
| JDV2S14E |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| JDP2S01AFS |
TOSHIBA Diode Silicon Epitaxial PIN Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS272TE85R |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| CBS05F30 |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| 1SV239-14 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| 1SV285-14 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| JDV2S01S |
TOSHIBA Diode Silicon Epitaxial Planar Type 东芝半导体硅外延平面
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 2Z20 2Z22 2Z24 2Z27 2Z27A 2Z51 2Z12 2Z13 2Z15 2Z16 |
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| 1SV322 |
Diode Silicon Epitaxial Planar Type TCXO/VCO
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
|
