| PART |
Description |
Maker |
| PBSS4160DPN PBSS4160DPN/T2 |
60 V, 1 A NPN-PNP low VCEsat (BISS) transistor PBSS4160DPN<SOT457 (TSOP6)|<<http://www.nxp.com/packages/SOT457.html<1<Always Pb-free,;
1000 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| APT14F100S APT14F100B09 |
Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| KSB564A KSB564AYTA_NL KSB564ACGBU KSB564ACGTA KSB5 |
Audio Frequency Power Amplifier 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Epitaxial Silicon Transistor
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| DSS9110Y DSS9110Y-7 DSS9110Y-15 |
100V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
|
| DCP69A-13 |
1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-4
PNP SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| 2N3868SMD05-JQRR4 2N3868SMD05 |
Bipolar PNP Device in a Hermetically sealed
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AA HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
|
Seme LAB
TT electronics Semelab, Ltd.
|
| MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2SB1115A-T1 |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
|
| CTLT7410-M621TR |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
CENTRAL SEMICONDUCTOR CORP
|
|
