PART |
Description |
Maker |
2SC5212 |
Small Signal Transistor Low collector saturation voltage VCE(sat)=0.2V typ. High collector current ICM=1A.
|
TY Semicondutor TY Semiconductor Co., Ltd
|
BC369 C62702-C748 |
From old datasheet system PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BC327-16 BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
|
2SD1328 |
Low ON resistance Ron. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., L...
|
2SD1691 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
Unisonic Technologies
|
DN200 |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
DP030S |
Extremely low collector-to-emitter saturation voltage 极低的集电极到发射极饱和电压
|
AUK, Corp. AUK[AUK corp]
|
2SB1628 |
High current capacitance. Low collector saturation voltage.
|
TY Semiconductor Co., Ltd
|
2SD1815 |
Low collector-to-emitter saturation voltage. Excllent linearity of hFE.
|
TY Semiconductor Co., L...
|
2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
2SA1730 |
Adoption of FBET , MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|