| PART |
Description |
Maker |
| GT40J121 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT40QR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| IXBN42N170A |
Discrete IGBTs
|
IXYS
|
| SG200N06S |
Discrete IGBTs
|
Sirectifier Global Corp...
Sirectifier Semiconductors
Sirectifier Semiconduct...
|
| IXBT42N170 IXBH42N170 |
Discrete IGBTs
|
IXYS
|
| SG12N06DP SG12N06P |
Discrete IGBTs
|
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| IXBT42N170A IXBH42N170A |
Discrete IGBTs
BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IRGPC50M |
Insulated Gate Bipolar Transistors (IGBTs)(??矾棰??瓒?揩???缂?????????朵?绠?
600V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SH30 |
Silicon N Channel IGBT High Speed Power Switching
IGBTs
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
