| PART |
Description |
Maker |
| LBSS138WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS139DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| BSS138LT1 |
N-CHANNEL POWER MOSFET
Power MOSFET 200 mAmps, 50 Volts
|
WILLAS ELECTRONIC CORP
|
| BSS138LT1/D BSS138LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| MGSF1P02ELT1 MGSF1P02ELT3 MGSF1P02ELT1-D |
Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23
Power MOSFET 750 mAmps, 20 Volts PChannel SOT23
Power MOSFET 750 mAmps, 20 Volts P-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
| BS108ZL1 BS108 BS108ZL1G BS108G |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92(250mA,200V,小信号，逻辑电平，N-沟道增强型MOS场效应管（TO-92封装
|
ONSEMI[ON Semiconductor]
|
| BS107A BS107ARLRP BS107ARLRM BS107ARL1 BS107 BS107 |
Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92
From old datasheet system
Fast Recovery Glass Passivated Rectifier Diodes
|
ONSEMI[ON Semiconductor]
|
| NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
| MMBF2201NT1 MMBF2201NT1-D MMBF2201N |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ON Semiconductor
|
| IXFT74N20 IXFR90N20 IXFE24N100 |
HIPERFET POWER MOSFETs 74 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET ISOPLUS247, 3 PIN
Single MOSFET Die 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
|
