| PART |
Description |
Maker |
| RJK0451DPB-00-J5 RJK0451DPB13 |
40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| CMPZ4615 CMPZ4616 CMPZ4614 CMPZ4617 CMPZ4618 |
350mW LOW NOISE ZENER DIODE 5% TOLERANCE
VARISTOR, 1206 18VDC 0.4JVARISTOR, 1206 18VDC 0.4J; Voltage, varistor at 1mA:25.5V; Voltage, clamping max:42V; Voltage, clamping 8/20us max:40V; Energy, transient 10/1000us max:0.4J; Current, peak 8/20us max:150A; Voltage rating,
|
Central Semiconductor Corp.
|
| SBA100-04Y SBA100-04YSMP-FD |
10 A, 40 V, SILICON, RECTIFIER DIODE SMP-FD, 3 PIN
Schottky Barrier Diode (Twin Type Cathode Common) 40V, 10A Rectifier
40V 10A Rectifier
40V/ 10A Rectifier
|
SANYO Semiconductor Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| IRF7470 |
Power MOSFET(Vdss=40V/ Rds(on)max=13mohm/ Id=10A)
Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A)
|
IRF[International Rectifier]
|
| FDD8447L08 |
Fast Switching
40V N-Channel PowerTrench? MOSFET 40V, 50A, 8.5mΩ
40V N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.5mヘ
|
Fairchild Semiconductor
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| T308N20TOC |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Eupec Power Semiconductors
|
| T308N2000TOF |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Telefunken Electronic
|
| IRFI064 IRFI064-15 |
Simple Drive Requirements
TRANSISTOR N-CHANNEL(Vdss=60V/ Rds(on)=0.017ohm/ Id=45A*)
TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
60V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
|
International Rectifier
|
| MAX15014AATX |
1A, 4.5V to 40V Input Buck Converters with 50mA Auxiliary LDO Regulators 2.6 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, QCC36
|
Maxim Integrated Products, Inc.
|
| STW45NM60 |
N-CHANNEL 600V - 0.09 OHM - 45A TO-247 MDMESH POWER MOSFET
N-CHANNEL 600V - 0.09 OHM - 45A TO-247 MDMESH POWER MOSFET
N-CHANNEL 600V - 0.09ohm - 45A TO-247 MDmesh Power MOSFET
N-CHANNEL 600V - 0.09ohm - 45A TO-247 MDmesh⑩Power MOSFET
|
ST Microelectronics
STMicroelectronics
意法半导
|
