PART |
Description |
Maker |
RJK0853DPB13 RJK0853DPB-00-J5 RJK0853DPB-15 |
80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching 80V, 40A, 8.0m?max. Silicon N Channel Power MOS FET Power Switching
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Renesas Electronics Corporation
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DF40SC4 |
Schottky Rectifiers (SBD) (40V 40A)
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Shindengen Mfg.Co.Ltd SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
RJK0656DPB-00-J5 |
60V, 40A, 5.6m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
FDS4080N7 |
RELAY, 4PCO, 12VDC; Configuration, contact:4PCO; Voltage, contact DC max:30V; Voltage, coil DC nom:12V; Current, contact AC max:5A; Current, contact DC max:5A; Voltage, contact AC max:250V; Resistance, coil:160R; Material, RoHS Compliant: Yes 40V N-Channel FLMP PowerTrench MOSFET
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
FDD8447L08 |
Fast Switching 40V N-Channel PowerTrench? MOSFET 40V, 50A, 8.5mΩ 40V N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.5mヘ
|
Fairchild Semiconductor
|
126S 117S 151S 176S |
THYRISTOR/DIODE MODULE, 40A 1200VTHYRISTOR/DIODE MODULE, 40A 1200V; Voltage, Vrrm:1200V; Current, It av:40A; Case style:SEMIPACK 1; Current, It rms 3/8 (9.52mm) Sq. Wirewound Trimmers 3/8in [9.52mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Military Quality at Affordable Prices
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Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
BP40-01 BP40-005 BP40-04 BP40-06 BP40-02 BP40-08 B |
40A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
HT1000/08OJ6 |
800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
T308N20TOC |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Eupec Power Semiconductors
|
RJF0618JPE |
60V-40A Silicon N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
Z88C00-20VSC Z88C00-25VEC Z88C00-20VEC Z88C01-25VE |
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218X; Current, It av:40A; Gate Trigger Current Max, Igt:100mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Holding Current:50mA; Leaded Process Compatible:Yes RoHS Compliant: Yes Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:4A; Holding Current:30mA Microcontroller 微控制器 Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218; Current, It av:40A; Gate Trigger Current Max, Igt:100mA 8位微控制
|
Maxim Integrated Products, Inc.
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