| PART |
Description |
Maker |
| AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes
x8 Flash EEPROM
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
|
Advanced Linear Devices, Inc.
|
| AMS431 AMS431A AMS431AL AMS431AM AMS431AN AMS431AS |
PRECISION ADJUSTABLE SHUNT REGULATOR 精密可调并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| ADM3311 ADM3311E ADM3311EARS-REEL25 ADM3311EARU-RE |
15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceiver with Green Idle?/a>
15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceiver with Green Idle⑩
15 kV ESD Protected. 2.7 V to 3.6 V Serial Port Transceiver with Green Idle
JFET; Breakdown Voltage, V(br)gss:40V; Zero Gate Voltage Drain Current Min, Idss:-4mA; Zero Gate Voltage Drain Current Max, Idss:-16mA; Gate-Source Cutoff Voltage Max, Vgs(off):9V; Continuous Drain Current, Id:-16mA RoHS Compliant: No
15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceiver with Green Idle 15 kV的ESD保护.7 V.6 V绿色串口收发闲置
|
AD[Analog Devices]
Analog Devices, Inc.
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| AP1702 AP1702AW AP1702AWL AP1702BW AP1702BWL AP170 |
4.63 V, 3-pin microprocessor reset circuit
4.38 V, 3-pin microprocessor reset circuit
3.08 V, 3-pin microprocessor reset circuit
TRANSISTOR, JFET N TO-18
RECTIFIER SBR SINGLE 2A 30V 75A-ifsm 0.45Vf 0.2mA-ir PowerDI-123 3K/REEL
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source Cutoff Voltage Max, Vgs(off):-4V; Package/Case:TO-78
3-Pin Microprocessor Reset Circuits 3引脚微处理器复位电路
JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source Cutoff Voltage Max, Vgs(off):-4V 3引脚微处理器复位电路
2.93 V, 3-pin microprocessor reset circuit
2.63 V, 3-pin microprocessor reset circuit
4.00 V, 3-pin microprocessor reset circuit
|
ANACHIP[Anachip Corp]
ETC[ETC]
复位半导
NEC, Corp.
Kingbright, Corp.
|
| HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K H |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic
From old datasheet system
JFET-N-CHANNEL SWITCH
Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
|
| STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| SST65P542R-8-C-SG |
Remote Controller MCU
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.01ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No
|
Silicon Storage Technology, Inc.
|
| KI5904DC |
Drain-Source Voltage VDS 20V Gate-Source Voltage VGS -12V
|
TY Semiconductor Co., Ltd
|
| KI4920DY |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
