| PART |
Description |
Maker |
| NTMFS08N2D5C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| FDB86135 |
N-Channel Shielded Gate PowerTrench? MOSFET
|
Fairchild Semiconductor
|
| FDMC8360L |
N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m
|
Fairchild Semiconductor
|
| FDD86326 |
N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm
|
Fairchild Semiconductor
|
| FDMC86106LZ13 |
N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ
|
Fairchild Semiconductor
|
| FDD86250 |
FDD86250 N-Channel Shielded Gate PowerTrench? MOSFET 150 V, 50 A, 22 mΩ
|
Fairchild Semiconductor
|
| MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
