| PART |
Description |
Maker |
| HSM88WA |
MPAK package is suitable for high density surface mounting and high speed assembly
|
TY Semiconductor Co., Ltd
|
| VN340SPTR-E VN340SP-E -VN340SP-E |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.06 to 6.33; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.26 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 四高端智能电源固态继电器
Quad high side smart Power solid state relay
|
EPCOS AG
STMicroelectronics
|
| TMP47C102M TMP47C202P |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.84 to 5.37; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
|
Toshiba Corporation
Toshiba, Corp.
|
| 12CWQ03FNTR 12CWQ03FNPBF 12CWQ03FNTRL 12CWQ03FNTRL |
SCHOTTKY RECTIFIER 12 Amp 肖特基整流器12安培
Zener Diode; Application: Surge absorption; Pd (mW): 200; Vz (V): 6.47 to 7.0; Condition Iz at Vz (mA): 5; C (pF) max: 25; Condition VR at C (V): 0; ESD (kV) min: 20; Package: MPAK
|
International Rectifier, Corp.
|
| HVD355B |
Super small Flat Lead Package (SFP) is suitable for surface mount design
|
TY Semiconductor Co., Ltd
|
| DF2S12FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.85 to 9.23; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| 1SMAF4728A 1SMAF4729A 1SMAF4730A 1SMAF4731A 1SMAF4 |
Small plastic package suitable for surface mounted design
Small plastic package suitable for surface mounted design
|
Chendahang Electronics ...
Jiangsu Yutai Electroni...
|
| HSU277 |
Low forward resistance Ultra small Resin Package (URP) is suitable for surface mount design
|
TY Semiconductor Co., L...
|
| HZM7.5NB HZM7.5NB2 HZM7.5NB3 HZM4.3NB HZM2.2NB HZM |
10 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
7.5 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
12 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
9.1 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
3.6 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MPAK-3
2.4 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MPAK-3
2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MPAK-3
2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MPAK-3
3.3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MPAK-3
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
RF/Coaxial Connector; RF Coax Type:BNC; Contact Termination:Twist On; Body Style:Straight Plug; RG Cable Type:59, 62, 71, 140, 210 RoHS Compliant: Yes
Diodes>Zener
20 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Silicon Epitaxial Planar Zener Diode for Stabilizer
|
http://
NXP Semiconductors N.V.
Renesas Electronics, Corp.
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| REC15-XX12SZ/H/M REC15-XX3.4S/H/M REC15-XX3.4SZ/H/ |
The REC15-xxxxS_D/M -series offer single and dual regulated outputs in a 2”x1 package with 2kVDC or 3kVDC isolation options and are suitable for higher power industrial applications.
The REC15-xxxxS_D/M -series offer single and dual regulated outputs in a 2”x1?package with 2kVDC or 3kVDC isolation options and are suitable for higher power industrial applications.
|
Recom International Power
Recom International Pow...
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| DF2S12S DF3A6.2FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
