PART |
Description |
Maker |
RJK6024DPD-00J2 RJK6024DPD-12 |
600V - 0.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6024DPE RJK6024DPE-15 |
600V - 0.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6006DPP-E0 RJK6006DPP-E0-15 |
600V - 5A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FGW35N60H |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
FGW75N60H |
Discrete IGBT (High-Speed V series) 600V / 75A
|
Fuji Electric
|
RJH60F7BDPQ-A0 |
600V - 50A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S5DPE-00-J3 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S4DPE-00-J3 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6012DPP-E0 |
600V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S3DPP-E0 RJK60S3DPP-E0-T2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6018DPM-00T1 |
600V - 30A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SC3632-Z |
High voltage VCEO=600V High speed tf 0.5ìs Collector to base voltage VCBO 600 V
|
TY Semiconductor Co., Ltd
|