| PART |
Description |
Maker |
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| TX-GC51111-85 TXB-GC51101-81 GC51102-89 |
C-KA BAND, 3.3 pF, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
C-KA BAND, 0.35 pF, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
C-KA BAND, 0.47 pF, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| AH214-F54 AH222-CHIP2 AH236-CHIP2 AH225-00 AH239-7 |
VHF-KA BAND, 1.4 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 0.5 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 2.8 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 2.2 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 6.9 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 9.42 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 5.72 pF, 15 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-KA BAND, 2.2 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
|
| MA48708C MA48705E MA48706C MA48702E MA48700 MA4870 |
mm WAVE BAND, GALLIUM ARSENIDE, STEP RECOVERY DIODE
GaAs Multiplier Varactors
|
M/A-COM Technology Solutions, Inc.
|
| MGV125-21-P55 MGV075-15-P55 MGV100-24-P55 MGV075-1 |
KA BAND, 0.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.63 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.33 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.63 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.43 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.48 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.58 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE CERAMIC PACKAGE-2
|
NIC Components, Corp.
|
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| L680 DGSK8-025A DGS3-025AS DGS4-025A |
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|
| CHV2243A |
Fully Integrated Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
United Monolithic Semiconductors
|
| SKY77573-21 |
Quad-band cellular handsets encompassing
Tx-Rx Front-End Module for Quad-Band GSM/ GPRS/ EDGE with 4-Band Antenna Switch Support
|
Skyworks Solutions Inc.
|
| SKY77195 |
Dual-Band PA Module for WCDMA / HSDPA Band I (1920-1980 MHz) and Band VIII (880-915 MHz)
|
Skyworks Solutions Inc.
|
| SKY77196 |
Dual-Band PA Module for WCDMA / HSDPA Band II (1850-1910 MHz) and Band V (824-849 MHz)
|
Skyworks Solutions Inc.
|
|
