| PART |
Description |
Maker |
| AS219-321 |
AS219-321:PHEMT GaAs IC High Linearity 3 V T/R SP3|DC-6 GHz Plastic Packaged and Chip|SPST AS219 - 321：PHEMT的砷化镓集成电路高线3室SP3的|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Alpha Industries, Inc.
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE
16 A, 800 V, SILICON, RECTIFIER DIODE
16 A, 400 V, SILICON, RECTIFIER DIODE
25 A, 200 V, SILICON, RECTIFIER DIODE
25 A, 1000 V, SILICON, RECTIFIER DIODE
16 A, 1200 V, SILICON, RECTIFIER DIODE
16 A, 100 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
| RS0219 |
DIOD ASSEMBLY
|
Solid States Devices, Inc
|
| EFM202L EFM201L EFM203L EFM204L EFM205L EFM206L EF |
2 A, 150 V, SILICON, RECTIFIER DIODE
2 A, 300 V, SILICON, RECTIFIER DIODE
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Ampere
2 A, 100 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M- |
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| IRG4BC15UD-LPBF IRG4BC15UD-SPBF IRG4BC15UD-L IRG4B |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
|
International Rectifier
|
| CPR2-040TRLEADFREE CPR2-010TRLEADFREE CPR2-120TRLE |
2 A, 400 V, SILICON, RECTIFIER DIODE
2 A, 100 V, SILICON, RECTIFIER DIODE
2 A, 1200 V, SILICON, RECTIFIER DIODE
2 A, 200 V, SILICON, RECTIFIER DIODE
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| SDR954MDBS SDR953Z SDR953ZUBTX SDR953ZDB SDR953ZUB |
50 A, 400 V, SILICON, RECTIFIER DIODE, TO-254AA
Hyper Fast Rectifier
50 A, 300 V, SILICON, RECTIFIER DIODE, TO-254
50 A, 500 V, SILICON, RECTIFIER DIODE, TO-254
50 A, 600 V, SILICON, RECTIFIER DIODE, TO-254
|
SOLID STATE DEVICES INC
Solid States Devices, Inc
Solid States Devices, I...
|
| 1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N36 |
12A silicon power rectifier, 200V
12A silicon power rectifier, 1000V
Military Silicon Power Rectifier
12A silicon power rectifier, 400V
12A silicon power rectifier, 600V
12A silicon power rectifier, 800V
|
MICROSEMI[Microsemi Corporation]
http://
|
| IR30CDR..LSERIES IR30CDR04LPBF IR30CDR10L IR30CDR0 |
1000 V, SILICON, RECTIFIER DIODE
400 V, SILICON, RECTIFIER DIODE
HIGH POWER RECTIFIER DIODES
800 V, SILICON, RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
International Rectifier
|
|
