PART |
Description |
Maker |
KI4501ADY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 30V
|
TY Semiconductor Co., Ltd
|
KI4953DY |
100per Rg Tested Drain-Source Voltage Vds -30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
KI4920DY |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
KDC6020C |
N-Channel:VDS=20V ID=5.9A P-Channel:VDS=-20V ID=-4.2A RDS(ON) 55m
|
TY Semiconductor Co., Ltd
|
ZVP3310FTA |
100 Volt VDS
|
TY Semiconductor Co., L...
|
GFC360 |
N Channel Power MOSFET with high VDS
|
Gunter Seniconductor GmbH.
|
KI1553DL |
PIN Configuration Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., L...
|
KI1555DL |
PIN Configuration Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., L...
|
ST93C46A ST93C46AB1013TR ST93C46AB1TR ST93C46AB301 |
From old datasheet system 1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:6-TSOP RoHS Compliant: Yes MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-4.5A; On-Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-TSOP; Leaded Process Compatible:No MOSFET, P TSOP-6MOSFET, P TSOP-6; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:12V; Case style:TSOP-6; Current, Id cont:4.5A; Current, Idm pulse:20A; Power, Pd:1.1W; Resistance, Rds on:0.04R; SMD:1; Charge, Qrr typ Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13 Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 1628 × 8 MICROWIRE的串行EEPROM 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 16128 × 8 MICROWIRE的串行EEPROM
|
SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
IRSF3031 |
FULLY PROTECTED DMOS POWER SWITCH(Vds=50V, Rds(on)=200mohm)
|
IRF[International Rectifier]
|
KHP45N03LT |
Low on-state resistance Fast switching. Drain-Source Voltage VDS 30 V
|
TY Semiconductor Co., Ltd
|
KI1304BDL |
TrenchFET Power MOSFET 100 Rg Tested Drain-source voltage VDS 30 V
|
TY Semiconductor Co., Ltd
|