| PART |
Description |
Maker |
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP10N10L |
Power MOSFET, 100V, TO-220, RDSon=154mOhm, 10A, LL
|
Infineon
|
| SPU11N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, I-PAK, RDSon=179mOhm, 11A, NL
|
Infineon
|
| BSS169 |
SIPMOS SMALL-SIGNAL-TRANSISTOR
Low Voltage MOSFETs - Depletion MOSFET, 100V, SOT-23, RDSon = 12Ohm, 0.09A, NL
|
Infineon Technologies A...
Infineon Technologies AG
|
| BZX84C11 BZX84C6V2 BZX84C4V7 BZX84C39 BZX84C22 BZX |
Voltage Range 2.4 to 51 Volts 350m Watts Power Dissipation
|
Taiwan Semiconductor Compan...
Taiwan Semiconductor Company, Ltd
|
| SPI47N10L SPP47N10L SPB47N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=26mOhm, 47A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP10N10 SPB10N10 SPI10N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=180mOhm, 10A, NL
SIPMOS Power-Transistor
SIPMOS功率晶体
|
Infineon Technologies AG
|
| BUZ345 BUZ345C67078-S3121-A2 |
Single-chip ZigBee® 802.15.4 solution
SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.045 Ohm, 41A, NL
|
INFINEON[Infineon Technologies AG]
|
| BSP123 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=6 Ohm, 0.37A, LL
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IPD12N03L IPU12N03L |
DDM43W2S
OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL
OptiMOS Buck converter series
|
INFINEON[Infineon Technologies AG]
http://
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| ZVP3310FTA |
100 Volt VDS
|
TY Semiconductor Co., L...
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