| PART |
Description |
Maker |
| FQU5N40TU |
400V N-Channel QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 3.4 A, 400 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
| SGU2N60UFD |
Ultra-Fast IGBT 2.4 A, 600 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 1MBI400NB-120 |
IGBT module 400 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
|
| SPMQ613-02TXV |
400 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-8
600V, 400A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc.
Solid States Devices, Inc
|
| MGP20N40CL_D ON1864 MGP20N40CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V ce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED)
|
ONSEMI[ON Semiconductor]
|
| DIM400PHM17-A000 |
400 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| NGD18N40CLBT4G NGD18N40ACLBT4G NGD18N40CLB12 |
Ignition IGBT, 18 A, 400 V N.Channel DPAK
|
ON Semiconductor
|
| NGD8201NT4G NGD8201AN NGD8201ANT4G NGD8201N12 |
Ignition IGBT 20 A, 400 V, N.Channel DPAK
|
ON Semiconductor
|
| GP400LSS12 |
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 10uF; Voltage: 160V; Case Size: 18x20 mm; Packaging: Bulk 400 A, 1200 V, N-CHANNEL IGBT
Single Switch IGBT Module
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| NGP8203N |
Ignition IGBT 20 A, 400 V, N-Channel TO-220
Ignition IGBT 20 A, 400 V, N−Channel TO−220
|
ONSEMI[ON Semiconductor]
|
