| PART |
Description |
Maker |
| SGU15N40LTU |
400 V, N-CHANNEL IGBT, TO-251
|
FAIRCHILD SEMICONDUCTOR CORP
|
| SGU2N60UFD |
Ultra-Fast IGBT 2.4 A, 600 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQU20N06TU |
60V N-Channel QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 16.8 A, 60 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
| SUU40N06-25L |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 34A I(D) | TO-251 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 34A条（丁）|251
|
Vishay Intertechnology, Inc.
|
| 1MBI400NB-120 |
IGBT module 400 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
|
| GT10G101 |
10 A, 400 V, N-CHANNEL IGBT
|
|
| DIM400PHM17-A000 |
400 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| NGD8201NT4G NGD8201AN NGD8201ANT4G NGD8201N12 |
Ignition IGBT 20 A, 400 V, N.Channel DPAK
|
ON Semiconductor
|
| NGD8201N NGD8201NT4 |
Ignition IGBT 20 A, 400 V, N-Channel DPAK
|
ON Semiconductor
|
| CM400DY-50H |
HIGH POWER SWITCHING USE INSULATED TYPE
400 A, 2500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
