| PART |
Description |
Maker |
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
| ISL9R460PF2 ISL9R460PF2NL |
4A, 600V Stealth ™, Diode, TO-220F Package
4A, 600V Stealth Diode
From old datasheet system
4A / 600V Stealth Diode
|
Fairchild Semiconductor
|
| IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
|
IRF[International Rectifier]
|
| IRG4BC20KS IRG4BC20K-S |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
|
IRF[International Rectifier]
|
| AM29841A/BKA AM29841A/B3A AM29843PC AM29843ALC AM2 |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package; Similar to IRGIB7B60KD with Lead Free Packaging
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS10B60KD with Standard Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRG4BC15UD-L with Lead Free Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRGSL6B60KD with Standard Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRGSL15B60KD with Lead Free Packaging
1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package; Similar to IRG4PSH71UD with Lead Free Packaging
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS6B60KD with Standard Packaging
600V Warp2 150kHz Copack IGBT in a TO-247AC package; A IRGP50B60PD1 with Standard Packaging
600V UltraFast Copack Trench IGBT in a TO-247AD package with Ultra-Low VF Diode for Induction Heating and Soft Switching Apps; A IRGP4068D-EPBF with Standard Packaging
600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; A IRG4BC30FD-S with Standard Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRG4BC15UD-L with Standard Packaging
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package; A IRGS4B60KD1 with Standard Packaging
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package; Similar to IRG4PH40UD2-E with Lead Free Packaging 10位D型锁存器
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10KD with Lead Free Packaging 9位D型锁存器
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package; A IRGB6B60KD with Standard Packaging 9位D型锁存器
|
Duracell
TT electronics Semelab, Ltd.
NXP Semiconductors N.V.
|
| IRG4PC50W IRG4PC50WPBF |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| FCH041N60F |
N-Channel SuperFETII FRFETMOSFET 600V, 76A, 41m
600V N-Channel MOSFET, FRFET
|
Fairchild Semiconductor
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PC40FD IRG4PC40 IRG4PC40FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
