| PART |
Description |
Maker |
| 2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986
15 A, 140 V, NPN, Si, POWER TRANSISTOR
16 A, 80 V, PNP, Si, POWER TRANSISTOR
16 A, 250 V, PNP, Si, POWER TRANSISTOR
|
Motorola
AMERICAN MICROSEMICONDUCTOR INC
|
| 1-350346-0 |
.240, .295" Centerline, 250 v, 28 A max. (.140" MATE-N-LOK); 03P .140 MNL PLUG P/M NAT ( AMP )
|
Tyco Electronics
|
| CSB546O CSB546R CSB546Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401
|
Continental Device India Limited
|
| SF0140BA03069S |
140 MHz SAW Filter 7 MHz Bandwidth
From old datasheet system
140 MHz Low Loss SAW Filters
|
Integrated Circuit Systems
ICS
|
| MJE5850 MJE5850-D MJE5851 |
Power 8A 300V Discrete PNP
SWITCHMODE Series PNP Silicon Power Transistors
Power 8A 350V Discrete PNP
|
ON Semiconductor
|
| SF0140BA01990S |
140 MHz Filter 24 MHz Bandwidth
140 MHz Low Loss SAW Filters
|
API Technologies Corp
Integrated Circuit Systems
ICS
|
| APT4014BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 400V 28A 0.140 Ohm
|
Advanced Power Technology Ltd.
|
| APT5014LVR |
POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| NS15003 |
20 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
|
MICROSEMI CORP
|
| SES12VD923-2U |
140 Watts peak pulse power
|
Surge Components
|
| MP220-100-A MP220-100-B MP220-100-C MP220-100-D MP |
POWER FILM RESISTORS TO 140 WATT
|
RCD COMPONENTS INC.
|
| BTS5231-2GS |
Smart High-Side Power Switch PROFET Two Channels, 140 m 惟
Smart High-Side Power Switch PROFET Two Channels, 140 m Ω
|
Infineon Technologies AG
|
