PART |
Description |
Maker |
CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器(为512k × 3600万18 CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http:// Yuasa Battery, Inc. Integrated Circuit Technology Corp Microsemi, Corp. Sony, Corp. Sony Corporation
|
IA1215S IA1215D IA1212D IA1209S IA0509D IA0509S IA |
Analog IC 模拟IC 316 POS BGA EXT. SOCKET 316 POS 1.27MM BGA EXT. SOCKET 313 POS 1.27MM BGA EXT. SOCKET
|
Electronic Theatre Controls, Inc. XP Power, Ltd.
|
FDZ293P06 FDZ293P |
P-Channel 2.5 V Specified PowerTrench? BGA MOSFET P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IBM25PPC440GX-3FB533C IBM25PPC440GX-3CB533C IBM25P |
32-BIT, 533 MHz, RISC PROCESSOR, PBGA552 25 X 25 MM, FLIP CHIP, PLASTIC, BGA-552 32-BIT, 533 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552 32-BIT, 667 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
|
Mitsubishi Electric, Corp.
|
FDZ7296 |
30V N-Channel PowerTrenc BGA MOSFET 30V N-Channel PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IS61NVP51272-250B1 IS61NVP51272-250B1I IS61NVP1024 |
512K X 72 ZBT SRAM, 2.6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 1M X 36 ZBT SRAM, 2.6 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 1M X 36 ZBT SRAM, 3.1 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 512K X 72 ZBT SRAM, 3.1 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
|
Integrated Silicon Solution, Inc.
|
UPD44325084F5-E37-EQ2-A UPD44325084F5-E50-EQ2-A UP |
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165 4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
|
NEC, Corp.
|
IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165 256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119 256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165 256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119 SENSOR DIFF VACUUM GAGE 1PSI SENSOR ABSOLUTE 0-15PSIA 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
N01L1618N1AB2-70I N01L1618N1AB-70I |
64K X 16 STANDARD SRAM, 70 ns, PBGA48 GREEN, BGA-48 64K X 16 STANDARD SRAM, 70 ns, PBGA48 BGA-48
|
ON Semiconductor ST Microelectronics
|
FW80321M600Q467 FW80321M400Q466 |
600 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544 400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
|
K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119 128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
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