PART |
Description |
Maker |
HSM88WA |
MPAK package is suitable for high density surface mounting and high speed assembly
|
TY Semiconductor Co., Ltd
|
CRS0506 CRS05 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD Switching Mode Power Supply Applications
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
TMP86C407MG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 21.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
TMP86C420UG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 23.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 8位微控制
|
Toshiba, Corp.
|
TMP86CH22UG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.15 to 4.34; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 8位微控制
|
Toshiba, Corp.
|
WP7104PGD |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.86 to 7.14; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK T-1 (3mm) SOLID STATE LAMP
|
Kingbright Corporation.
|
HVR100 |
Small Resin Package (SRP) is suitable for surface mount design
|
TY Semiconductor Co., L...
|
HVD372B |
Super small Flat Lead Package (SFP) is suitable for surface mount design
|
TY Semiconductor Co., Ltd
|
1SMAF4728A 1SMAF4729A 1SMAF4730A 1SMAF4731A 1SMAF4 |
Small plastic package suitable for surface mounted design Small plastic package suitable for surface mounted design
|
Chendahang Electronics ... Jiangsu Yutai Electroni...
|
SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器 MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4 3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/1 |
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 12; Ic (A): 0.075; Pc (W): 0.7; hFE: 100 to 200; fT (GHz) typ: 7.8; Cob (pF) max: 0.9; NF (dB) typ: 1; Package: MPAK Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4 3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|