PART |
Description |
Maker |
2N1493 2N1410 2N335 2N337 2N333 2N2537 2N3510 2N36 |
5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR | BJT | NPN | 25MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 20MA I(C) | TO-5 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 500MA I(C) | TO-52 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-105 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 50MA I(C) | TO-72 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 6V V(BR)CEO | 100MA I(C) | TO-92 TRANSISTOR | BJT | NPN | 7V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 300MA I(C) | TO-5
|
Weidmuller, Corp.
|
BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG |
NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
FA1A4Z FA1A4ZL68 FA1A4ZL67 FA1A4ZL69 FA1A4Z-L FA1A |
Compound transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-346 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
|
NEC Corp. ON Semiconductor
|
2SD1616A 2SD1616 D1616 2SD1616AU 2SD1616-L |
1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 NPN SILICON TRANSISTORS NPN硅三极管 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92
|
NEC, Corp. NEC Corp. NEC[NEC]
|
2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五(巴西)总裁|8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 500mA的一(c)|
|
Central Semiconductor, Corp. Microsemi, Corp.
|
PBSS4350SS115 |
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 From old datasheet system (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
CE1A3Q CE1A3Q-T CE1A3Q-T-A |
2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR COMPOUND TRANSISTOR Hybrid transistor TRANS DIGITAL BJT NPN 70V 2000MA 3SP-8 T/R
|
NEC Corp. NEC[NEC] NEC Electronics
|
2SC5346 2SC5346S |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-71VAR 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
|
Panasonic, Corp. Matsshita / Panasonic Panasonic Semiconductor
|
BCX29 BF299 BF298 BFR58 BC312 MH7301 BF294 BC533 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-92 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-39 MAX 3000A CPLD 512 MC 208-PQFP 晶体管|晶体管|叩| 160V五(巴西)总裁| 100mA的一c)| TO - 220AB现有 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 晶体管|晶体管|叩| 160V五(巴西)总裁| 100mA的一(c)| TO - 39封装 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | TO-92
|
TE Connectivity, Ltd.
|
2SB1516F5/NP 2SA1727F5/NP 2SD1918F5/NP 2SD1767T101 |
3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.7 A, 80 V, NPN, Si, POWER TRANSISTOR 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 5 A, 20 V, PNP, Si, POWER TRANSISTOR 1 A, 32 V, NPN, Si, POWER TRANSISTOR 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
International Rectifier, Corp. Dielectric Laboratories, Inc.
|
PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体 60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
|