| PART |
Description |
Maker |
| 2SD1894P 2SD1894Q |
7 A, 140 V, NPN, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
| 2N3442 ON0039 |
Hlgh -Power lndustrlal Translsrors
From old datasheet system
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS
|
Motorola, Inc.
ON Semi
|
| BDY25C.MOD |
6 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA HERMETIC SEALED, METAL, TO-3, 2 PIN
|
TT electronics Semelab, Ltd.
|
| TDA4605 |
PWM Control IC for SMPS using MOS-Tra...
Control IC for Switched-Mode Power Supplies using MOS-Transistors
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2N6339 2N6340 |
High-Power NPN Silicon Transistor(25A200W20V（集电极-发射极），硅NPN大功率晶体管) 25 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
High-Power NPN Silicon Transistor(25A00W40V（集电极-发射极），硅NPN大功率晶体管) 25 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| BUT232V03 BUT232V_03 BUT232V |
NPN TRANSISTOR POWER MODULE
NPN TRANSISTOR POWER MODULE
140 A, 300 V, NPN, Si, POWER TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| RF-230 CX-30 CX-31A CX-31B CX-39A CX-39A-Y CX-39B |
SENSORE FOTOELETTRICO ECONOMICO, COMPATTO, CON AMPLIFICATORE INCORPORATO SENSORE FOTOELETTRICO经济日报，COMPATTO，节能AMPLIFICATORE科尔波拉
GENERAL PURPOSE TRANSISTOR NPN|IN 3-PIN SOT-23 TRA SENSORE FOTOELETTRICO经济日报，COMPATTO，节能AMPLIFICATORE科尔波拉
|
List of Unclassifed Man...
http://
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| BLF7G24L-140 BLF7G24LS-140 |
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF7G24LS-140<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G24LS-140<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
Power LDMOS transistor BLF7G24LS-140<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G24LS-140<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| APT4014BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 400V 28A 0.140 Ohm
|
Advanced Power Technology Ltd.
|
| APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT8014JLL |
POWER MOS 7 800V 42A 0.140 Ohm
|
Advanced Power Technology
|
