| PART |
Description |
Maker |
| K6R4008V1C |
512Kx8 Bit High Speed Static
|
Samsung semiconductor
|
| KM684002AE |
512Kx8 Bit High Speed Static RAM
|
Samsung
|
| KM681001B KM681001B-15 KM681001B-20 |
From old datasheet system
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
128K x 8 Bit High-Speed CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的）
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6T4008C1B-DB70 |
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG
|
| MX26LV400TXBC-55G MX26LV400BXBC-70G MX26LV400TXBC- |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
http://
|
| K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256K X 4 STANDARD SRAM, 8 ns, PDSO32
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的）在商业和工业温度范围操作
TV 23C 21#20 2#16 SKT PLUG REC
64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges
TV 55C 55#22D SKT PLUG RECP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
| HM6208HSERIES 6208H HM6208H HM6208HJP-35 HM6208HJP |
65,536-word ′ 4-bit High Speed CMOS Static RAM
From old datasheet system
65,536-WORD ? 4-BIT HIGH SPEED CMOS STATIC RAM
|
Hitachi Semiconductor
|
| P4C198L-35CMB P4C198L-45PMB P4C198L-35LMB P4C198L- |
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 35 ns, CDIP24
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 超高6K的4静态CMOS五羊
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 35 ns, CQCC28
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 25 ns, CQCC28
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 25 ns, CDIP24
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 超高16K的4静态CMOS五羊
Automotive Relays; V23072A1061A303 ( Tyco Electronics ) 超高6K的4静态CMOS五羊
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 超高6K的4静CMOS五羊
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 15 ns, CDIP24
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 20 ns, CDIP24
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 20 ns, CQCC28
|
Pyramid Semiconductor, Corp.
|
