| PART |
Description |
Maker |
| L12016-1630T-C L12005-1900H-C L12007-1294H-C L1201 |
Quantum Cascade Laser
|
Hamamatsu Corporation
|
| SC16722 |
CASCADE LED DRIVER OF HEAVY CURRENT
|
Silan Microelectronics Joint-stock
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TDA753506 TDA7535_06 |
DELTA/SIGMA CASCADE 20 BIT STEREO DAC
|
STMICROELECTRONICS[STMicroelectronics]
|
| SMS45 SMS45GCR00 SMS45GCR01 SMS45GCR02 SMS45GCR03 |
Quad Programmable Precision Cascade Sequencer and Supervisory Controller with 4k-Bit Nonvolatile Memory
|
SUMMIT[Summit Microelectronics, Inc.]
|
| ML725AA11F ML725B11F ML725J11F ML720L11S ML720AA11 |
1310 nm, LASER DIODE
MITSUBISHI LASER DIODES InGaAsP DFB LASER DIODES 三菱激光二极管InGaAsP的DFB激光器
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| EQ-433L |
EQ-433L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-430L |
EQ-430L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| MAX3946ETG |
1.0625Gbps to 11.3Gbps, SFP Laser Driver with Laser Impedance Mismatch Tolerance
|
Maxim Integrated Products
|
| CL7128SQC160-15 CL7128SQC100-15 CL7128EQC160-12 CL |
Laser-Programmable Complex PLD 激光可编程复杂可编程逻辑器件
Laser processed logic device
|
Carling Technologies, Inc.
CLEARLOGIC
|
