PART |
Description |
Maker |
MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26 |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM MICA RoHS Compliant: No 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd. http://
|
TC58V64AFTI |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung Electronic Samsung semiconductor
|
MX25L6436E MX25L6436EM2I10G MX25L6436EZNI10G |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MX25L6473E MX25L6473EMBI10G MX25L6473EMI10G |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MX25U6435F MX25U6435FM2I10G MX25U6435FZNI10G |
1.8V 64M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MX25L6439E MX25L6439EM2I10G |
64M-BIT [x 1 / x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存 64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
UPD29F064115F9-CD5 UPD29F064115GZ-MJH UPD29F064115 |
64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE
|
NEC[NEC]
|
KM23V64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
PD42S65405 PD4264405 |
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 动态RAM) 16,777,216词由4位的CMOS动态存储器(RAM400动态) 16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M ?ㄦ?RAM)
|
NEC, Corp. NEC Corp.
|