PART |
Description |
Maker |
MM3Z10VS |
Planar Die Construction
|
TY Semiconductor Co., L...
|
MMSTA13 |
Epitaxial Planar Die Construction
|
TY Semiconductor Co., Ltd
|
GBJ35005 |
Glass passivated die construction
|
Sangdest Microelectroni...
|
MBR830 MBR860 |
Guard Ring Die Construction for Transient Protection
|
Kersemi Electronic Co., Ltd.
|
1N5819-T 1N5817-B 1N5817-T 1N5818-B 1N5819-B 1N581 |
Through-Hole Schottky Rectifiers Guard Ring Die Construction for Transient Protection
|
Diodes Incorporated
|
MJD112L MJD112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
TIP117 |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
CPL |
Commercial Power, Axial Lead, Fireproof Inorganic Construction, Complete Welded Construction, High Thermal Conductivity and Moisture Resistance for Aqueous Board Wash Systems
|
Vishay
|
2SPT6341SD |
MultiEpitaxial Planar NPN Power Transistor Die
|
Solid States Devices, Inc
|
S3K-13 S3MB |
Glass Passivated Die Construction 3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
|
Diodes Incorporated
|
1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE (1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction) IC REG VOLT 4.8V 240MA SOT-23 Rectifiers(Rugged glass package/ using a high temperature alloyed construction) Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器(坚固的玻璃封装,采用高温合金建设 Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors] http:// NXP Semiconductors N.V.
|