| PART |
Description |
Maker |
| UPD5756T6N-E2-A |
SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function
|
Renesas Electronics Corporation
|
| UPC8233TK UPC8233TK-E2 UPC8233TK-E2-A |
BIPOLAR ANALOG INTEGRATED CIRCUIT SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS
|
California Eastern Labs
|
| NTE1056 NTE1449 NTE1453 NTE1862 NTE347 |
Integrated Circuit FM Stereo Multiplex Demodulator
Integrated Circuit Low Noise Eqalizer Amp
Integrated Circuit 2−Channel, Low Noise, Equalizier Amp
Integrated Circuit TV Vertrical Deflection Circuit
Silicon NPN Transistor
|
NTE[NTE Electronics]
|
| NTE15030 |
Integrated Circuit CMOS, Color Processing Circuit for VCR 集成电路的CMOS，色彩处理电路录像机
Integrated Circuit CMOS / Color Processing Circuit for VCR
|
ON Semiconductor
NTE Electronics
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC55V8200FT-12 TC55V8200FT-15 TC55V8200FT-10 |
2,097,152-WORD BY 8-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC51WHM516AXGN70 TC51WHM516AXGN65 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| KS9282B |
CMOS INTEGRATED CIRCUIT
|
Samsung semiconductor
|
| KS555 KS555D |
CMOS INTEGRATED CIRCUIT
|
Samsung semiconductor
|
| TC58DVM92A1FT00 TC58DVM92A1FT |
Flash - NAND
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
