| PART |
Description |
Maker |
| KSC1845 |
NPN (AUDIO FREQUENCY LOW NOISE AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| QM05YD106KAT2A |
QM series ?vertical electrodes, reduces low frequency (audio) noise
|
AVX Corporation
|
| 2SK214507 |
N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK20907 2SK209 |
Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC332407 2SC3324 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC2458 E000718 2SC2458L |
TRANSISTOR (AUDIO, LOW NOISE AUDIO AMPLIFIER APPLICATIONS) 晶体管（音频，低噪声音频放大器应用）
TRANSISTOR (AUDIO/ LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
From old datasheet system
AUDIO AMPLIFIER APPLICATIONS LOW NOISE AUDIO AMPLIFIER APPLICATIONS
|
Toshiba, Corp.
Toshiba Semiconductor
|
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| 2SA1316 |
TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER/ RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS)
TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS)
FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS
|
SMSC, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ109 E001254 |
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER, DIFFERENTIAL AMPLIFIER APPLICATIONS)
LOW NOISE AUDIO AMPLIFIER APPLICATIONS DIFFERENTIAL AMPLIFIER APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
