PART |
Description |
Maker |
PBP2718 PBP2727 PBP5427 PBP5436 PBPA5436 PB362718 |
Panneau interieur - Serie PB
|
Hammond Manufacturing Ltd. Hammond Manufacturing L...
|
PW755430 PW654425 PW534320 PWP6544 PWP5343 PWPA433 |
Panneau interieur - Serie PW
|
Hammond Manufacturing Ltd. Hammond Manufacturing L...
|
DTS3165A230N3LG DTS3185A230N4SS DTS3185A115N4SS DT |
Climatiseur exterieur de 5000-12000 BTUH
|
Hammond Manufacturing Ltd. Hammond Manufacturing L...
|
DTS3161A230N3LG DTS3261A230N3LG DTS3261A115N3LG DT |
Climatiseur exterieur de 4000-7500 BTUH
|
Hammond Manufacturing Ltd.
|
CM75E3U-24H |
Chopper IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
MUR10120 MUR10120E MUR10120E_D ON2728 |
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS 10 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC From old datasheet system
|
Micro Commercial Components, Corp. ON Semi MOTOROLA[Motorola, Inc]
|
APT15GT120BR APT15GT120BRG APT15GT120SRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
CM400DU-24F |
Dual IGBTMOD 400 Amperes/1200 Volts 400 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor... Powerex Power Semiconductors Powerex, Inc.
|
STTH6012 STTH6012W |
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-247 Ultrafast recovery - 1200 V diode
|
STMicroelectronics
|
APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
STTH312B -STTH312B |
Ultrafast recovery - 1200 V diode 3 A, 1200 V, SILICON, RECTIFIER DIODE
|
STMICROELECTRONICS
|
MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264 IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED From old datasheet system
|
ONSEMI[ON Semiconductor]
|