| PART |
Description |
Maker |
| RJK0629DPN RJK0629DPN-00-T2 RJK0629DPN-15 |
60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| FQP27P06 |
60V P-Channel MOSFET
Inductor; Inductor Type:Standard; Inductance:217uH; Series:CMS; DC Resistance Max:0.02ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2.85A; Leaded Process Compatible:Yes; Leakage Inductance:1.9uH RoHS Compliant: Yes
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1 |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
|
IRF[International Rectifier]
|
| FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 Package
N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m
N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| STDD15 STDD15-04W STDD15-05W STDD15-07S STDD15-07S |
LOW CAPACTITANCE DETECTION DIODE
LOW CAPACTITANCE DETECTION DIODE
LOW CAPACITANCE DETECTION DIODE
PTC 1.60A 30V RESETTABLE 30R SER
Resettable Fuse; Series:30R; Thermistor Type:PTC; Operating Voltage Max:30V; Holding Current:0.9A; Tripping Current:1.8A; Length:12.2mm; Lead Pitch:5.1mm; Initial Resistance Min:0.07ohm; Initial Resistance Max:0.22ohm RoHS Compliant: NA
FUSE,1.85A, 30V, RESET,0.40"WX0.62"H 0.20"LS,TH,0.03 OHMS
FUSE,1.85A, 30V, RESET,0.40"WX0.62"H 0.20"LS,TH,0.03 OHMS CAPACTITANCE检测二极管
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| FDB088N08 |
N-Channel PowerTrenchMOSFET 75V, 85A, 8.8m
|
Fairchild Semiconductor
|
| RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0652DPB RJK0652DPB-00-J5 RJK0652DPB-13 |
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| HUFA75433S3ST HUFA75433S3S |
N-Channel UltraFET R MOSFETs 60V, 64A, 16mOhm
N-Channel UltraFET MOSFETs 60V/ 64A/ 16m
N-Channel UltraFET MOSFETs 60V, 64A, 16mз 64 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| 2SJ598-Z 2SJ598 |
P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251, TO-252
SWITCHING P-CHANNEL POWER MOS FET
|
NEC[NEC]
NEC Corp.
|
| STB85NF3LLT4 STB85NF3LL06 STB85NF3LL_06 B85NF3LL S |
N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
