| PART |
Description |
Maker |
| FT312D-32L1C FT312D-32Q1C |
Future Technology Devices International Ltd.
|
List of Unclassifed Manufacturers
|
| USB-COM422 |
Future Technology Devices International Ltd
|
List of Unclassifed Manufac...
|
| FT245RQ-REEL FT245RL-REEL |
Future Technology Devices International Ltd. FT245R USB FIFO IC
|
List of Unclassifed Man...
Future Technology Devic...
|
| USB-RS232-PCB |
Future Technology Devices International Ltd USB to RS232 UART Serial Converter PCB Datasheet
|
List of Unclassifed Man...
|
| UPC8232T5N UPC8232T5N-E2 |
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
California Eastern Laboratories
|
| 2FB-60-F |
FUTURE BUS CONNECTOR
|
Adam Technologies, Inc.
|
| 2FB-XX-F-353 |
FUTURE BUS CONNECTOR
|
Adam Technologies, Inc.
|
| TSOP17..XG1 TSOP1730XG102 UC1682XFBZ UPC8232T5N-E2 |
Synchronous Step-Down DC/DC Converter with built-in LDO Regulator in parallel plus Voltage Detector 同步降压型DC / DC转换器内置LDO的同时加电压检测器调节
High Performance 8-bit Microcontroller
HIGH-VOLTAGE MIXED-SIGNAL IC
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
Torex Semiconductor, Ltd.
ETC
CEL
TOREX[Torex Semiconductor]
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
