| PART |
Description |
Maker |
| IXGR60N60U1 |
LowV-CE(sat) IGBT with Diode ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS[IXYS Corporation]
|
| IXFR24N50 IXFR26N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| CS22 CS22-08IO1M CS22-12IO1M |
Phase Control Thyristors Electrically Isolated Tab 3.925 A, 1200 V, SCR, TO-220AB
Phase Control Thyristors Electrically Isolated Tab 3.925 A, 800 V, SCR, TO-220AB
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXGR16N170AH1 |
High Voltage IGBT with Diode Electrically Isolated Tab
|
IXYS Corporation
|
| X2816AM |
2048 x 8-Bit / Electrically EPROM
ELECTRICALLY ERASABLE PROM
|
Xicor Inc.
|
| ISPLSI2128A-100LQ160 ISPLSI2128A-80LT176 ISPLSI212 |
Electrically-Erasable Complex PLD
Electrically-ErasableComplexPLD
|
|
| ISPLSI2096A-100LT128 ISPLSI2096A-125LT128 ISPLSI20 |
Electrically-Erasable Complex PLD
Electrically-ErasableComplexPLD
|
|
| MBR2X050A100 |
Electrically Isolated Base Plate
|
GeneSiC Semiconductor, ...
|
| MBR2X050A120 |
Electrically Isolated Base Plate
|
GeneSiC Semiconductor, ...
|
| ATF16V8B-15PC ATF16V8B ATF16V8B-10PC ATF16V8B/BQ/B |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
ATF16V8B/BQ/BQL [Updated 4/01. 19 Pages] 250 gate electrically erasable PLD. 20 pins
From old datasheet system
250 gate electrically erasable PLD, 20 pins
|
Atmel, Corp.
Atmel Corp
|
| RMMB RMMB1910UBK3 RMMB193UBK3 |
Support pour ecran monte sur bati
|
Hammond Manufacturing Ltd.
|
