| PART |
Description |
Maker |
| UPD46128512F9-CR2 UPD46128512-X UPD46128512-E11X U |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 128兆位CMOS移动指明内存800万字6位温度范
|
NEC, Corp.
NEC Corp.
|
| MX25L12805D MX25L12805DMI-20G |
128M-BIT [x 1] CMOS SERIAL FLASH
|
Macronix International
|
| MX25L12805D |
128M-BIT [x 1] CMOS SERIAL FLASH
|
http://
|
| MX25L12845E |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
http://
|
| K3P9VU1000A-YC |
128M-Bit (16Mx8 /8Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD4 |
SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
| UPD45128163G5-A75-9JF UPD45128841G5-A10B-9JF UPD45 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
OSCILLATORS 100PPM -20 70 3.3V 4 18.432MHZ PD HCMOS 5X7MM 4PAD SMD 128兆位同步DRAM 4银行，LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 128兆位同步DRAM 4银行，LVTTL
|
NEC Corp.
NEC, Corp.
|
| K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| M38037M6-122FP M38037M6-133FP M38037M6-154FP M3803 |
RAM size: 2048bytes single chip 8-bit CMOS microcomputer
RAM size: 1536bytes single chip 8-bit CMOS microcomputer
RAM size: 768bytes single chip 8-bit CMOS microcomputer
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
3803/04 Group: General Purpose, with Flash
RAM size: 256bytes single chip 8-bit CMOS microcomputer
RAM size: 640bytes single chip 8-bit CMOS microcomputer
RAM size: 896bytes single chip 8-bit CMOS microcomputer
RAM size: 512bytes single chip 8-bit CMOS microcomputer
RAM size: 384bytes single chip 8-bit CMOS microcomputer
RAM size: 1024bytes single chip 8-bit CMOS microcomputer
RAM size: 3804bytes single chip 8-bit CMOS microcomputer
RAM size: 192bytes single chip 8-bit CMOS microcomputer
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| K9F1G08Q0A K9F1G08U0A K9F1G08Q0M |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
