PART |
Description |
Maker |
NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NEC
|
NX6309GH NX6309GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
NX5504_06 NX5504 NX5504EH-AZ NX5504EK-AZ NX550406 |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
NX5501EK-AZ NX5501 NX5501EH-AZ |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
CEL[California Eastern Labs]
|
NX5310 NX5310EH-AZ NX5310EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
|
California Eastern Laboratories
|
DS1865T DS186509 DS1865TTR |
PON Triplexer Control and Monitoring Circuit
|
http:// Maxim Integrated Products Maxim Integrated Produc...
|
DS1865TTR |
PON Triplexer Control and Monitoring Circuit
|
MAXIM - Dallas Semiconductor
|
DS1886T |
SFP and PON ONU Controller with Digital LDD Interface
|
MAXIM - Dallas Semiconductor
|
DS1884AT DS1884TT DS1884ATT |
SFP and PON ONU Controller with Digital LDD Interface
|
MAXIM - Dallas Semiconductor
|
VSC7716 |
1.25 Gbps Burst Mode Transimpedance Amplifier for GE-PON (EPON) Systems
|
Vitesse Semiconductor Corporation
|
NX6240GP |
1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
California Eastern Labs
|