| PART |
Description |
Maker |
| RDHA701CD10A2NX RDHA701CD10A2NX-15 |
Radiation Hardended, 100V, Dual 1.0A, Solid State Relay
Hermetically Sealed Ceramic Package
|
International Rectifier
|
| MX043G MX043J MX043 |
Radiation Hardended MOSFET
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| RDHA710SE10A2FK |
Radiation Hardended, Solid-State Relay with Buffered Inputs
|
International Rectifier
|
| RA03M8894M RA03M8894M-101 RDHA710SE10A2FK |
889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
Radiation Hardended, Solid-State Relay with Buffered Inputs
|
IRF
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
| IRUH330118B IRUH330118BPA |
Fast Transient Response
Radiation Hardended Ultra Low Dropout Fixed Positive Linear Regulator
|
International Rectifier
|
| IRHG563110 IRHG567110 IRHG563110P IRHG567110P IRHG |
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
|
IRF[International Rectifier]
|
| IRHQ597110 IRHQ597110P |
100V Quad P-Channel MOSFET in a 28-pin LCC package
-100V 100kRad Hi-Rel Quad P -Channel TID Hardened MOSFET in a 28-pin LCC package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| IRHF8130 IRHF3130 IRHF4130 IRHF7130 JANSF2N7261 JA |
30V N-Channel PowerTrench MOSFET
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
|
IRF[International Rectifier]
|
| IRHNJ54130 IRHNJ57130 IRHNJ53130 IRHNJ58130 JANSF2 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) 抗辐射功率MOSFET表面贴装系统（SMD - 0.5
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRHN9150 JANSF2N7422U JANSR2N7422U IRHN93150 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
22 A, 100 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
| IRH93150 IRH9150 |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) 抗辐射功率MOSFET的通孔T0 204AE
|
International Rectifier, Corp.
|
