PART |
Description |
Maker |
IRFB23N15D IRFSL23N15D |
Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A) 150V,23A,SMPS MOSFET for High frequency DC-DC converters(150V,23A,开关电MOS场效应管,用于高DC-DC变换 50V3A条,开关电源的MOSFET的高频率DC - DC转换器(50V3A条,开关电源马鞍山场效应管,用于高频的DC - DC变换器)
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International Rectifier, Corp.
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STD15NF10 STD15NF10T4 D15NF10 |
N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET
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STMICROELECTRONICS[STMicroelectronics]
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RJK1056DPB RJK1056DPB-15 |
100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching 100V, 25A, 14m?max. Silicon N Channel Power MOS FET Power Switching
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Renesas Electronics Corporation
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RJK1051DPB-00-J5 RJK1051DPB-15 |
100V, 15A, 39m max. Silicon N Channel Power MOS FET Power Switching 100V, 15A, 39m?max Silicon N Channel Power MOS FET Power Switching
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Renesas Electronics Corporation
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IRFS59N10D IRFSL59N10D IRFB59N10D IRFB59N10 IRFS59 |
Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A) Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) HEXFET? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
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IRF[International Rectifier]
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Q67040-S4381 IDD23E60 |
Silicon Power Diodes - 23A EmCon in TO252 Fast Switching EmCon Diode
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INFINEON[Infineon Technologies AG]
|
0923180817 |
Picoflex PF-50 IDT-Board In Z-Style, 8 Circuits, 0.17m (6.69") Length
|
Molex Electronics Ltd.
|
RF1S23N06LESM |
23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,逻辑电平,N沟道功率MOS场效应管) 23 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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Intersil, Corp.
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X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http:// INTERSIL[Intersil Corporation] Intersil, Corp.
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2SD1840 2SB1230 |
PNP Epitaxial Planar Silicon Transistor 100V/4A Switching Applications NPN Triple Diffused Planar Silicon Transistor 100V/4A Switching Applications
|
Sanyo
|
JANSR2N7294 FN4292 |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFET 23A, 200V, 0.115 Ohm, Rad Hard,N-Channel Power MOSFET From old datasheet system 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET
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INTERSIL[Intersil Corporation]
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