| PART |
Description |
Maker |
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| SPH-20.13OHM5 SPH-20.11OHM5 SPH-20.16OHM5 SPH-20.1 |
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.13 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.11 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.16 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.15 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 47 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.051 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.091 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 1300 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 3.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.33 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.36 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.39 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 56 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 82 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 1.1 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 4.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 68 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 1.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.43 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 2.4 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
IRC Advanced Film
|
| SGSP575 |
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
STMICROELECTRONICS
|
| IRFU322 |
2.3 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| STP11NB40 |
10.7 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
STMICROELECTRONICS
|
| DF340JAAEHSB DF340JAAEHD1B |
10 A, 400 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
SOLITRON DEVICES INC
|
| IRF360 |
25 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
HARRIS SEMICONDUCTOR
|
| IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| SFF330-28 |
5.5 AMP 400 Volts 1.1 OHM N-Channel POWER MOSFET
|
SSDI[Solid States Devices, Inc]
|
| RFP8P08 RFP8P10 RFM8P10 RFM8P08 |
-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
|
HARRIS[Harris Corporation]
|
| MTW16N40E |
TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
|
MOTOROLA[Motorola, Inc]
|
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