| PART |
Description |
Maker |
| QS8J13 QS8J13TR |
-12V Pch Pch Middle Power MOSFET
|
ROHM
|
| RQ3E120AT |
Pch -30V -12A Middle Power MOSFET
|
ROHM
|
| 2SA1834 A5800344 2SC5001 2SC5001TLR 2SA1834TLR 2SC |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 20V的五（巴西）总裁| 10A条一（c）|律师- 63
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | SC-63
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | SC-63
Low VCE(sat) Transistor (Strobe flash) (-20V, -10A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
| RUF025N02FRATL |
Nch 20V 2.5A Middle Power MOSFET
|
ROHM
|
| HP8MA2 |
30V Nch Pch Middle Power MOSFET
|
Rohm
|
| APT50M38JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
MOSFET P-CH 20V 4.3A 8-SOIC 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 500V 91A 0.038 Ohm
|
Advanced Power Technology, Ltd.
|
| FX70SMJ-03 FX70SMJ-03-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| FX6ASJ-2-T13 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| FX6KMJ-06 FX6KMJ-06-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| FX6ASJ-03 FX6ASJ-0306 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| FX30KMJ-2 FX30KMJ-2-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
