PART |
Description |
Maker |
ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp. Microsemi Corporation
|
2SK1337 2SK1337TZ-E |
300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Silicon N Channel MOS FET
|
Renesas Electronics Corporation
|
RFD8P05 RFD8P05SM RFP8P05 FN2384 |
8A/ 50V/ 0.300 Ohm/ P-Channel Power MOSFETs 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
RF1S9530SM IRF9530 FN2221 |
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
STB46NF30 STP46NF30 STW46NF30 |
N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II Power MOSFET in a D2PAK package N-channel 300 V, 0.063 Ω typ, 42 A, STripFET II Power MOSFET in D2PAK, TO-220 and TO-247 packages N-channel 300 V, 0.063 Ω typ, 42 A, STripFET?II Power MOSFET in D2PAK, TO-220 and TO-247 packages
|
ST Microelectronics STMicroelectronics
|
BSM150GAL120DLC |
300 A, 1200 V, N-CHANNEL IGBT
|
|
2N7002-215 |
60 V, 300 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
FQB9N30 FQI9N30 |
300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOSFET) 9 A, 300 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
BST120135 |
300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP SEMICONDUCTORS
|
6ES7-332-5HD01-0AB0 |
S7-300/M7-300 Programmable Controllers Module
|
Simatic
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