| PART |
Description |
Maker |
| IXA20IF1200HB |
Easy paralleling due to the positive temperature Easy paralleling due to the positive temperature
|
IXYS Corporation
|
| IRF530PBF |
Dynamic dv/dt Rating, Fast Switching, Ease of Paralleling, Simple Drive Requirements
|
International Rectifier
|
| TGHLV1K00JE TGHHV150RJE TGHLV5K00JE |
Due to their non-inductive design
|
Ohmite Mfg. Co.
|
| AOK20B135E1 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| AOK20B120E2 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| IPT0406-25F IPT0406-18F |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| 4U-0010-0650-1 2U-0010-0148-8 2U-0010-0149-6 2U-00 |
This specification was revised due to the requirement described below.
This specification was revised due to the requirement described below.
|
3M Electronics
|
| IPT1208-SEF IPT1208-TEF IPT1208-CEF IPT1208-BEF |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| BF599 Q62702-F979 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IRF614 |
Ease of Paralleling
|
Vishay Siliconix
|
| G310 G310-ST310 |
Anti-visible rays due to visible ray cut resin for detector type
connector type
|
KODENSHI KOREA CORP.
|
