| PART |
Description |
Maker |
| KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
| UPD4664312-X UPD4664312F9-B65X-CR2 UPD4664312F9-BE |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
|
| A25LQ64 |
64M-BIT (x1 / x2 / x4) 3.3V CMOS MXSMIO
|
AMIC Technology
|
| TC58V64AFTI |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung Electronic
Samsung semiconductor
|
| K5Q6432YCM-T010 |
64M Bit Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| MX29LV065BTI-12 MX29LV065BTI-12G MX29LV065B MX29LV |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
|
List of Unclassifed Manufacturers
http://
|
| K3P7V1000 K3P7V1000B-YC K3P7VU1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM 6400位（8Mx8 / 4Mx16）的CMOS掩膜ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| PD42S65405 PD4264405 |
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 动态RAM) 16,777,216词由4位的CMOS动态存储器（RAM400动态）
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M ?ㄦ?RAM)
|
NEC, Corp.
NEC Corp.
|
