| PART |
Description |
Maker |
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| TMP95C265 E_030331_95CS64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| TMP93PW32 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93CS42A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| FQA11N90-F109 FQA11N90F109 |
N-Channel QFET? MOSFET 900 V, 11.4 A, 960 mΩ
|
Fairchild Semiconductor
|
| 9N90 |
900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 2SK3980 |
900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| FQA11N90C-F109 |
FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ohm
|
Fairchild Semiconductor
|
| 4N90L-TN3-R 4N90G-TN3-R 4N90G-TA3-T 4N90G-TF3-T 4N |
4 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| 11N90 11N90L-TF1-T 11N90G-TF1-T 11N90G-TA3-T 11N90 |
11 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
