| PART |
Description |
Maker |
| NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPTB00050 NPTB00050-15 |
Gallium Nitride 28V, 50W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| AML811P5011 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT2018 NPT2018-15 |
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
Industry Standard Plastic Package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| WH50-4K7JI WH25-33RJI WH25-27RJI WH25-2K2JI WH25-8 |
WIDERSTAND LEISTUNG CHASSI 4K7 1250V 50W
WIDERSTAND LEISTUNG CHASSI 33R 500V 25W
WIDERSTAND LEISTUNG CHASSI 27R 500V 25W
WIDERSTAND LEISTUNG CHASSI 2K2 500V 25W
WIDERSTAND LEISTUNG CHASSI 82R 500V 25W
WIDERSTAND LEISTUNG CHASSI 1K0 500V 25W
RESISTOR 1K5 25W
WIDERSTAND LEISTUNG CHASSI 1R0 500V 25W
RESISTOR 1R5 25W
WIDERSTAND LEISTUNG CHASSI 3R9 500V 25W
WIDERSTAND LEISTUNG CHASSI 2R2 500V 25W
WIDERSTAND LEISTUNG CHASSI 8K2 500V 25W
WIDERSTAND LEISTUNG CHASSI 0R10 500V 25W
WIDERSTAND LEISTUNG CHASSI 0R15 500V 25W
WIDERSTAND LEISTUNG CHASSI 0R56 500V 25W
RESISTOR 6K8 25W
RESISTOR 5K6 25W
WIDERSTAND LEISTUNG CHASSI 39R 500V 25W
RESISTOR 4K7 25W
RESISTOR 560R 25W
WIDERSTAND LEISTUNG CHASSI 56R 500V 25W
WIDERSTAND LEISTUNG CHASSI 0R1 100V 10W
WIDERSTAND LEISTUNG CHASSI 1R0 1250V 50W
RESISTOR 1R5 50W
WIDERSTAND LEISTUNG CHASSI 15R 1250V 50W
WIDERSTAND LEISTUNG CHASSI 33R 1250V 50W
WIDERSTAND LEISTUNG CHASSI 15R 250V 15W
WIDERSTAND LEISTUNG CHASSI 33K 1250V 50W
RESISTOR 50R 15W
WIDERSTAND LEISTUNG CHASSI 50R 1250V 50W
WIDERSTAND LEISTUNG CHASSI 0R47 1250V50W
RESISTOR R33 50W
WIDERSTAND LEISTUNG CHASSI 0R33 250V 15W
WIDERSTAND LEISTUNG CHASSI 220R 500V 25W
WIDERSTAND LEISTUNG CHASSI 0R33 500V 25W
WIDERSTAND LEISTUNG CHASSI 47R 500V 25W
RESISTOR R68 50W
WIDERSTAND LEISTUNG CHASSI 0R5 1250V 50W
WIDERSTAND LEISTUNG CHASSI 3K9 500V 25W
WIDERSTAND LEISTUNG CHASSI 0R24 500V 25W
RESISTOR 0R05 25W
RESISTOR 3K3 25W
RESISTOR 0R22 25W
RESISTOR 0R01 25W
WIDERSTAND LEISTUNG CHASSI 68R 500V 25W
WIDERSTAND LEISTUNG CHASSI 2R 250V 15W
WIDERSTAND LEISTUNG CHASSI 5R 1250V 50W
WIDERSTAND LEISTUNG CHASSI 5K 250V 15W
WIDERSTAND LEISTUNG CHASSI 5R 250V 15W
WIDERSTAND给付沙西0R5 1250V 50
WIDERSTAND给付沙西50R 1250V 50
WIDERSTAND给付沙西50K250V 50
WIDERSTAND LEISTUNG CHASSI 2R 500V 25W WIDERSTAND给付沙西2R00V 25
WIDERSTAND LEISTUNG CHASSI 3R3 250V 15W WIDERSTAND给付沙西3R3 250V安永
RESISTOR 3R3 25W 25瓦电R3
RESISTOR 56R 50W 电阻56R 50
WIDERSTAND LEISTUNG CHASSI 8R2 500V 25W WIDERSTAND给付沙西8R2 500V 25
WIDERSTAND LEISTUNG CHASSI 22K 1250V 50W WIDERSTAND给付沙西22K 1250V 50
WIDERSTAND LEISTUNG CHASSI 20R 250V 15W WIDERSTAND给付沙西20R 250V安永
RESISTOR 150R 15W 电阻150R安永
WIDERSTAND LEISTUNG CHASSI 220R 250V 15W WIDERSTAND给付沙西220R 250V安永
WIDERSTAND LEISTUNG CHASSI 0R5 250V 15W WIDERSTAND给付沙西0R5 250V安永
WIDERSTAND LEISTUNG CHASSI 27R 100V 10W WIDERSTAND给付沙西27R 100V0W
WIDERSTAND LEISTUNG CHASSI 4R7 500V 25W WIDERSTAND给付沙西4R7 500V 25
WIDERSTAND LEISTUNG CHASSI 5R 500V 25W WIDERSTAND给付沙西5R 500V 25
WIDERSTAND LEISTUNG CHASSI 2R 1250V 50W WIDERSTAND给付沙西2R250V 50
RESISTOR 3R3 50W 50瓦电3R3
WIDERSTAND LEISTUNG CHASSI 6R8 500V 25W WIDERSTAND给付沙西6R8 500V 25
WIDERSTAND LEISTUNG CHASSI 1K0 1250V 50W WIDERSTAND给付沙西1K0 1250V 50
RESISTOR 12R 15W 电阻12受体安永
WIDERSTAND LEISTUNG CHASSI 1R5 250V 15W WIDERSTAND给付沙西1R5 250V安永
WIDERSTAND LEISTUNG CHASSI 22R 500V 25W
WIDERSTAND LEISTUNG CHASSI 22R 100V 10W
WIDERSTAND LEISTUNG CHASSI 180R 1250V50W
|
Welwyn Components, Ltd.
Cooper Bussmann, Inc.
Ametherm, Inc.
Bourns, Inc.
|
| WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| 2SA1012 2SA1012O 2SA1012Y |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-220AB
POWER TRANSISTORS(5A/50V/25W)
POWER TRANSISTORS(5A,50V,25W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 74W-502 74W103 74W201 |
TRIMMER 6.35MM CERMET MEHR 5K 0.25W
NEW GEN G AMP MOSFET DRIVER, -40C to 125C, 16-SOIC 300mil, T/R 修边.35mm的金属陶瓷伊朗Mehr 10,000 0.25W
4.5A DUAL MOSFET DRVR INV AND N-INV, -40C to 125C, 8-DFN, T/R
|
SIEMENS AG
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
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