| PART |
Description |
Maker |
| HY27UF082G2B HY27UF162G2B HY27UF082G2B-F |
2Gb NAND FLASH
256M X 8 FLASH 3.3V PROM, PBGA63
|
HYNIX SEMICONDUCTOR INC
|
| NT5CC256M8BN NT5CC128M16BP |
2Gb DDR3 SDRAM B-Die
|
Nanya
|
| K4B2G0846B |
2Gb B-die DDR3 SDRAM
|
Samsung
|
| M393B1K73CH0 |
240pin Registered DIMM based on 2Gb C-die
|
Samsung semiconductor
|
| M393B1K73EB0 |
240pin Registered DIMM based on 2Gb E-die
|
Samsung semiconductor
|
| M393B1K70DH0 |
240pin Registered DIMM based on 2Gb D-die
|
Samsung semiconductor
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| HMT42GR7CMR4C-G7 HMT351R7CFR4C-H9 HMT42GR7CMR4C-H9 |
DDR3 SDRAM Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4B2G1646C-HCF8000 |
2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant)
|
Samsung semiconductor
|
